| PART |
Description |
Maker |
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| K653 |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
PANASONIC CORP
|
| 3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGF7114C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| MGF7176C 7176C |
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
